Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

2 Citations (Scopus)


A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.
Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
Publication statusPublished - 1 Dec 2007
Externally publishedYes
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 12 Dec 200714 Dec 2007


Conference2007 International Semiconductor Device Research Symposium, ISDRS
Country/TerritoryUnited States
CityCollege Park, MD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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