Abstract
A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.
Original language | English |
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Title of host publication | 2007 International Semiconductor Device Research Symposium, ISDRS |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Externally published | Yes |
Event | 2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007 |
Conference
Conference | 2007 International Semiconductor Device Research Symposium, ISDRS |
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Country/Territory | United States |
City | College Park, MD |
Period | 12/12/07 → 14/12/07 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials