Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

Wing Man Tang; C. H. Leung; P. T. Lai

doi:10.1109/ISDRS.2007.4422251

Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

Wing Man Tang, C. H. Leung, P. T. Lai

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422251
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ISDRS.2007.4422251

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title = "Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator",

abstract = "A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.",

author = "Tang, {Wing Man} and Leung, {C. H.} and Lai, {P. T.}",

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Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator. / Tang, Wing Man; Leung, C. H.; Lai, P. T.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422251.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Leung, C. H.

AU - Lai, P. T.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.

AB - A novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor.

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U2 - 10.1109/ISDRS.2007.4422251

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M3 - Conference article published in proceeding or book

SN - 1424418917

SN - 9781424418916

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

Abstract

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