Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory

W. L. Liu, P. F. Lee, J. Y. Dai, J. Wang, H. L.W. Chan, C. L. Choy, Z. T. Song, S. L. Feng

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43 Citations (Scopus)


A trilayer metal-oxide-semiconductor structure containing a HfAlO tunnel layer, isolated Ge nanocrystals, and a HfAlO control layer, was obtained using pulsed-laser deposition (PLD). Self-organized Ge nanocrystals were formed by PLD at 600 °C, suggesting a useful low-temperature process for fabricating Ge nanocrystals embedded in dielectric materials. The self-organized Ge nanocrystals so formed were uniform in size and distribution with a density approaching 1012 cm-2. The effects of deposition temperature and growth rate in forming Ge nanocrystals were investigated and it was revealed that a relatively low temperature and growth rate are favorable for the formation of Ge nanocrystals. The memory effect of the Ge nanocrystals with storage charge density of up to 1012 cm-2 has been demonstrated by the presence of hysteresis in the capacitance-voltage curves.
Original languageEnglish
Article number013110
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1 Jan 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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