Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin; Samuel K H Fung; Weidong Liu; Philip Ching Ho Chan; Chenming Hu

Self-heating characterization for SOI MOSFET based on AC output conductance

Wei Jin, Samuel K H Fung, Weidong Liu, Philip Ching Ho Chan, Chenming Hu

Research output: Journal article publication › Conference article › Academic research › peer-review

Abstract

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (Rth) and thermal capacitance (Cth) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

Original language	English
Pages (from-to)	175-178
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, United States Duration: 5 Dec 1999 → 8 Dec 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{bd2a0b17bd614be0a16cf6dcd4d50607,

title = "Self-heating characterization for SOI MOSFET based on AC output conductance",

abstract = "A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (Rth) and thermal capacitance (Cth) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.",

author = "Wei Jin and Fung, {Samuel K H} and Weidong Liu and Chan, {Philip Ching Ho} and Chenming Hu",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "175--178",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "IEEE",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Self-heating characterization for SOI MOSFET based on AC output conductance

AU - Jin, Wei

AU - Fung, Samuel K H

AU - Liu, Weidong

AU - Chan, Philip Ching Ho

AU - Hu, Chenming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (Rth) and thermal capacitance (Cth) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

AB - A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (Rth) and thermal capacitance (Cth) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC IV data in device modeling.

UR - http://www.scopus.com/inward/record.url?scp=0033314624&partnerID=8YFLogxK

M3 - Conference article

SN - 0163-1918

SP - 175

EP - 178

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Self-heating characterization for SOI MOSFET based on AC output conductance

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this