Abstract
Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.
| Original language | English |
|---|---|
| Article number | 053506 |
| Journal | Applied Physics Letters |
| Volume | 109 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 Aug 2016 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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