Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

Z. B. Yan; H. M. Yau; Z. W. Li; X. S. Gao; Jiyan Dai; J. M. Liu

doi:10.1063/1.4960523

Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

Z. B. Yan, H. M. Yau, Z. W. Li, X. S. Gao, Jiyan Dai, J. M. Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.

Original language	English
Article number	053506
Journal	Applied Physics Letters
Volume	109
Issue number	5
DOIs	https://doi.org/10.1063/1.4960523
Publication status	Published - 1 Aug 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4960523

http://hdl.handle.net/10397/62050

Cite this

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AU - Li, Z. W.

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AU - Dai, Jiyan

AU - Liu, J. M.

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Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

Abstract

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