Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3films

Qing Miao; Min Zeng; Zhang Zhang; Xubing Lu; Jiyan Dai; Xingsen Gao; Jun Ming Liu

doi:10.1063/1.4875617

Self-assembled nanoscale capacitor cells based on ultrathin BiFeO₃films

Qing Miao, Min Zeng, Zhang Zhang, Xubing Lu, Jiyan Dai, Xingsen Gao, Jun Ming Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

Ultrathin multiferroic BiFeO3(BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called "anti-domain structure") and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories.

Original language	English
Article number	182903
Journal	Applied Physics Letters
Volume	104
Issue number	18
DOIs	https://doi.org/10.1063/1.4875617
Publication status	Published - 5 May 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.4875617

http://hdl.handle.net/10397/22217

Cite this

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title = "Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3films",

abstract = "Ultrathin multiferroic BiFeO3(BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called {"}anti-domain structure{"}) and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories.",

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AU - Miao, Qing

AU - Zeng, Min

AU - Zhang, Zhang

AU - Lu, Xubing

AU - Dai, Jiyan

AU - Gao, Xingsen

AU - Liu, Jun Ming

PY - 2014/5/5

Y1 - 2014/5/5

N2 - Ultrathin multiferroic BiFeO3(BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called "anti-domain structure") and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories.

AB - Ultrathin multiferroic BiFeO3(BFO) films with self-assembled surface nano-islands on La0.67Sr0.33MnO3/(100) SrTiO3substrates are fabricated by a one-step pulsed laser deposition process using the Bi-rich BFO target. It is revealed that these surface nano-islands mainly consist of conductive Bi2O3outgrowths, which serve as top electrodes for the nanoscale BFO capacitor cells with lateral size of 10-30nm. The ferroelectric BFO layer underneath these Bi2O3nanoislands prefers certain complex domain structure with vertical and antiparallel polarization components (the so-called "anti-domain structure") and reduced domain switching fields. Moreover, these nanoscale capacitor cells exhibit the resistive switching IV behavior, offering opportunities for application in ultrahigh density non-volatile memories.

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Self-assembled nanoscale capacitor cells based on ultrathin BiFeO₃films

Abstract

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