Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

Gang Chen, Anthony Hoi Wai Choi, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)

Abstract

A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.
Original languageEnglish
Article number011212
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
Publication statusPublished - 1 Jan 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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