Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

Gang Chen; Anthony Hoi Wai Choi; Pui To Lai; Wing Man Tang

doi:10.1116/1.4855057

Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

Gang Chen, Anthony Hoi Wai Choi, Pui To Lai, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

12 Citations (Scopus)

Abstract

A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.

Original language	English
Article number	011212
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	32
Issue number	1
DOIs	https://doi.org/10.1116/1.4855057
Publication status	Published - 1 Jan 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4855057

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title = "Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells",

abstract = "A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.",

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AU - Chen, Gang

AU - Choi, Anthony Hoi Wai

AU - Lai, Pui To

AU - Tang, Wing Man

PY - 2014/1/1

Y1 - 2014/1/1

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AB - A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current-voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.

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DO - 10.1116/1.4855057

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Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

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