Scaling the contacted poly pitch of 2D transistors

Xue Chen; Su Ting Han; Ye Zhou

doi:10.1038/s41928-025-01383-5

Scaling the contacted poly pitch of 2D transistors

Xue Chen
, Su Ting Han
, Ye Zhou (Corresponding Author)

The Hong Kong Polytechnic University

Research output: Journal article publication › Comment/debate/erratum

4 Citations (Scopus)

Abstract

Composite metal contacts deposited under high-vacuum conditions can be used to create molybdenum disulfide field-effect transistors with low contact resistance and a contacted poly pitch of just 60 nm.

Original language	English
Pages (from-to)	378-379
Number of pages	2
Journal	Nature Electronics
Volume	8
DOIs	https://doi.org/10.1038/s41928-025-01383-5
Publication status	Published - 12 May 2025

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

More information

10.1038/s41928-025-01383-5

Cite this

@article{f5282ee136224fb4bc6b136dbc645395,

title = "Scaling the contacted poly pitch of 2D transistors",

abstract = "Composite metal contacts deposited under high-vacuum conditions can be used to create molybdenum disulfide field-effect transistors with low contact resistance and a contacted poly pitch of just 60 nm.",

author = "Xue Chen and Han, \{Su Ting\} and Ye Zhou",

note = "Publisher Copyright: {\textcopyright} Springer Nature Limited 2025.",

year = "2025",

month = may,

day = "12",

doi = "10.1038/s41928-025-01383-5",

language = "English",

volume = "8",

pages = "378--379",

journal = "Nature Electronics",

issn = "2520-1131",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Scaling the contacted poly pitch of 2D transistors

AU - Chen, Xue

AU - Han, Su Ting

AU - Zhou, Ye

PY - 2025/5/12

Y1 - 2025/5/12

N2 - Composite metal contacts deposited under high-vacuum conditions can be used to create molybdenum disulfide field-effect transistors with low contact resistance and a contacted poly pitch of just 60 nm.

AB - Composite metal contacts deposited under high-vacuum conditions can be used to create molybdenum disulfide field-effect transistors with low contact resistance and a contacted poly pitch of just 60 nm.

UR - https://www.scopus.com/pages/publications/105004837797

U2 - 10.1038/s41928-025-01383-5

DO - 10.1038/s41928-025-01383-5

M3 - Comment/debate/erratum

AN - SCOPUS:105004837797

SN - 2520-1131

VL - 8

SP - 378

EP - 379

JO - Nature Electronics

JF - Nature Electronics

ER -

Scaling the contacted poly pitch of 2D transistors

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this