Abstract
Tin oxide (SnO 2 ) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO 2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO 2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO 2 (FTO) substrate and perovskite (CH 3 NH 3 PbI 3 ) layer. Thus, this SnO 2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO 2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1336-1343 |
| Number of pages | 8 |
| Journal | Applied Surface Science |
| Volume | 434 |
| DOIs | |
| Publication status | Published - 15 Mar 2018 |
Keywords
- Hole blocking layer
- Magnetron sputtering
- Perovskite solar cell
- Room temperature
- SnO
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films