Room temperature in-plane ferroelectricity in van der Waals In2Se3

  • Changxi Zheng
  • , Lei Yu
  • , Lin Zhu
  • , James L. Collins
  • , Dohyung Kim
  • , Yaoding Lou
  • , Chao Xu
  • , Meng Li
  • , Zheng Wei
  • , Yupeng Zhang
  • , Mark T. Edmonds
  • , Shiqiang Li
  • , Jan Seidel
  • , Ye Zhu
  • , Jefferson Zhe Liu
  • , Wen Xin Tang
  • , Michael S. Fuhrer

Research output: Journal article publicationJournal articleAcademic researchpeer-review

341 Citations (Scopus)

Abstract

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, b′-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.

Original languageEnglish
Article numbereaar7720
JournalScience advances
Volume4
Issue number7
DOIs
Publication statusPublished - 13 Jul 2018

ASJC Scopus subject areas

  • General

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