Room-temperature hydrogen-induced resistivity response of Pd/Mg-Ni films

Yu Ming Tang, Chung Wo Ong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


The structure and the response of the effective electrical resistivity m hydrogenation-dehydrogenation processes of palladium-coated/magnesium-nickel (Pd/Mg-Ni) films were investigated as functions of Mg-to-Ni ratio, substrate temperature, and thickness of Pd overcoat. Films of noncrystalline structures with various Mg-to-Ni ratios showed prominent hydrogen-(H-)induced switching effect of A film is supposed to contain segregated noncrystalline regions of different Mg-to-Ni ratios. The regions of an Mg-to-Ni ratio close to 2 are responsible for the switching processes. At room temperature, a dehydrogenation process is much slower than a hydrogenation process. Crystallization hindered the H-induced switching effect of The use of a thicker Pd overcoat accelerated the change of in the initial hydrogenating process but diminished the contrast. Results led to some discussions on the mechanisms governing the switching effects.
Original languageEnglish
Pages (from-to)1928-1935
Number of pages8
JournalJournal of Materials Research
Issue number6
Publication statusPublished - 1 Jun 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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