Room-temperature ferroelectricity in MoTe                         2                          down to the atomic monolayer limit

Shuoguo Yuan; Xin Luo; Hung Lit Chan; Chengcheng Xiao; Yawei Dai; Maohai Xie; Jianhua Hao

doi:10.1038/s41467-019-09669-x

Room-temperature ferroelectricity in MoTe ₂ down to the atomic monolayer limit

Shuoguo Yuan, Xin Luo, Hung Lit Chan, Chengcheng Xiao, Yawei Dai, Maohai Xie, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

247 Citations (Scopus)

Abstract

Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe ₂ with unexploited distorted 1T (d1T) phase. The origin of the ferroelectricity in d1T-MoTe ₂ results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe ₂ -based van der Waals heterostructure. Our work demonstrates that ferroelectricity can exist in two-dimensional layered material down to the atomic monolayer limit, which can result in new functionalities and achieve unexpected applications in atomic-scale electronic devices.

Original language	English
Article number	1775
Journal	Nature Communications
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41467-019-09669-x
Publication status	Published - 1 Apr 2019

ASJC Scopus subject areas

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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10.1038/s41467-019-09669-x

http://hdl.handle.net/10397/80848

Cite this

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AU - Yuan, Shuoguo

AU - Luo, Xin

AU - Chan, Hung Lit

AU - Xiao, Chengcheng

AU - Dai, Yawei

AU - Xie, Maohai

AU - Hao, Jianhua

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AB - Ferroelectrics allow for a wide range of intriguing applications. However, maintaining ferroelectricity has been hampered by intrinsic depolarization effects. Here, by combining first-principles calculations and experimental studies, we report on the discovery of robust room-temperature out-of-plane ferroelectricity which is realized in the thinnest monolayer MoTe 2 with unexploited distorted 1T (d1T) phase. The origin of the ferroelectricity in d1T-MoTe 2 results from the spontaneous symmetry breaking due to the relative atomic displacements of Mo atoms and Te atoms. Furthermore, a large ON/OFF resistance ratio is achieved in ferroelectric devices composed of MoTe 2 -based van der Waals heterostructure. Our work demonstrates that ferroelectricity can exist in two-dimensional layered material down to the atomic monolayer limit, which can result in new functionalities and achieve unexpected applications in atomic-scale electronic devices.

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Room-temperature ferroelectricity in MoTe ₂ down to the atomic monolayer limit

Abstract

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