Room temperature deposition of p -type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique

Clement Yuen, Siu Fung Yu, E. S.P. Leong, Shu Ping Lau, K. Pita, H. Y. Yang, T. P. Chen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

28 Citations (Scopus)

Abstract

The use of combined filtered cathodic vacuum arc (FCVA) technique and laser ablation to fabricate high-quality As doped ZnO (ZnO:As) films at room temperature is proposed. This is possible because FCVA technique is capable of realizing high-quality undoped ZnO films with extremely high resistivity (i.e., extremely low concentration of Zn interstitials) at low deposition temperature. In addition, laser ablation allows the generation of As plume to react with Zn ion species and O2 inside the FCVA chamber to form ZnO:As films. It was shown that high-quality p -type ZnO:As film with a resistivity of 0.05 cm, a mobility of 2 cm2 V s, and a hole concentration of 4× 1019 cm-3 was obtained at room temperature by using the proposed deposited technique. X-ray photoemission spectroscopy analysis has indicated that complex of As substitutional Zn induces two Zn vacancies (i.e., AsZn -2 VZn complex), which is likely to be the defect contributing to the formation of shallow acceptor lever inside the ZnO:As films. Furthermore, InAu Ohmic contacts deposited on p -type ZnO:As films and p-n ZnO based homojunction have been fabricated using plastic as the substrate.
Original languageEnglish
Article number094905
JournalJournal of Applied Physics
Volume101
Issue number9
DOIs
Publication statusPublished - 21 May 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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