Abstract
Current transport in metal-semiconductor-metal structures based on amorphous silicon alloys has been studied in relation to the density of dangling bond state defects. The density of defects was changed by varying alloy composition or by current stressing. We show that the change of current-voltage characteristics and activation energy with defect density and the onset of Poole-Frenkel conduction with composition require charged defects. It is found that there are more charged defects in amorphous silicon nitride (a-Si1-xNx:H) than in amorphous silicon carbide (a-Si1-xCx:H). In addition, an excess of negatively charged dangling bond defects compared to positively charged dangling bond defects is observed in a-Si1-xNx:H films. This is attributed to the presence of N4+act as the donor states in silicon nitride. We find that the density of charged dangling bond defects can be higher than 1019cm-3.
Original language | English |
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Pages (from-to) | 655-660 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 507 |
Publication status | Published - 1 Jan 1999 |
Externally published | Yes |
Event | Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, United States Duration: 14 Apr 1998 → 17 Apr 1998 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering