TY - JOUR
T1 - Robust spin-valley polarization in commensurate Mo S2 /graphene heterostructures
AU - Zhang, Qingming
AU - Du, Luojun
AU - Zhang, Qian
AU - Gong, Benchao
AU - Liao, Mengzhou
AU - Zhu, Jianqi
AU - Yu, Hua
AU - He, Rui
AU - Liu, Kai
AU - Yang, Rong
AU - Shi, Dongxia
AU - Gu, Lin
AU - Yan, Feng
AU - Zhang, Guangyu
PY - 2018/3/27
Y1 - 2018/3/27
N2 - The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
AB - The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
UR - http://www.scopus.com/inward/record.url?scp=85044960444&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.97.115445
DO - 10.1103/PhysRevB.97.115445
M3 - Journal article
VL - 97
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 11
M1 - 115445
ER -