Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

Xiaofeng Chen, Tingting Zhang, Yang Yu, Xiangbin Cai, Tianyi Gao, Tianwei Zhang, Haoying Sun, Chenyi Gu, Zhengbin Gu, Ye Zhu, Jian Zhou, Yuefeng Nie, Xiaoqing Pan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)


Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.

Original languageEnglish
Pages (from-to)7812-7821
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number6
Publication statusPublished - 17 Feb 2021


  • high mobility
  • layered perovskite
  • oxide heterostructure
  • oxygen vacancies
  • rewritable control

ASJC Scopus subject areas

  • Materials Science(all)


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