Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

Xiaofeng Chen; Tingting Zhang; Yang Yu; Xiangbin Cai; Tianyi Gao; Tianwei Zhang; Haoying Sun; Chenyi Gu; Zhengbin Gu; Ye Zhu; Jian Zhou; Yuefeng Nie; Xiaoqing Pan

doi:10.1021/acsami.1c00481

Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

Xiaofeng Chen, Tingting Zhang, Yang Yu, Xiangbin Cai, Tianyi Gao, Tianwei Zhang, Haoying Sun, Chenyi Gu, Zhengbin Gu, Ye Zhu, Jian Zhou, Yuefeng Nie, Xiaoqing Pan

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.

Original language	English
Pages (from-to)	7812-7821
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	6
DOIs	https://doi.org/10.1021/acsami.1c00481
Publication status	Published - 17 Feb 2021

Keywords

high mobility
layered perovskite
oxide heterostructure
oxygen vacancies
rewritable control

ASJC Scopus subject areas

Materials Science(all)

More information

10.1021/acsami.1c00481

Cite this

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title = "Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite",

abstract = "Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices. ",

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author = "Xiaofeng Chen and Tingting Zhang and Yang Yu and Xiangbin Cai and Tianyi Gao and Tianwei Zhang and Haoying Sun and Chenyi Gu and Zhengbin Gu and Ye Zhu and Jian Zhou and Yuefeng Nie and Xiaoqing Pan",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grants 11774153, 51672125, 51772143, 1861161004, and 11974163), the National Key R&D Program of China (Grant 2016YFA0201104), the Fundamental Research Funds for the Central Universities (Grant 0213-14380167), the Research Grants Council of Hong Kong (Project N_PolyU531/18), and the Hong Kong Polytechnic University (1-ZVRP). Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",

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doi = "10.1021/acsami.1c00481",

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TY - JOUR

T1 - Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

AU - Chen, Xiaofeng

AU - Zhang, Tingting

AU - Yu, Yang

AU - Cai, Xiangbin

AU - Gao, Tianyi

AU - Zhang, Tianwei

AU - Sun, Haoying

AU - Gu, Chenyi

AU - Gu, Zhengbin

AU - Zhu, Ye

AU - Zhou, Jian

AU - Nie, Yuefeng

AU - Pan, Xiaoqing

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China (Grants 11774153, 51672125, 51772143, 1861161004, and 11974163), the National Key R&D Program of China (Grant 2016YFA0201104), the Fundamental Research Funds for the Central Universities (Grant 0213-14380167), the Research Grants Council of Hong Kong (Project N_PolyU531/18), and the Hong Kong Polytechnic University (1-ZVRP). Publisher Copyright: © 2021 American Chemical Society.

PY - 2021/2/17

Y1 - 2021/2/17

N2 - Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.

AB - Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Srn+1TinO3n+1/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm2 V-1 s-1 at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.

KW - high mobility

KW - layered perovskite

KW - oxide heterostructure

KW - oxygen vacancies

KW - rewritable control

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DO - 10.1021/acsami.1c00481

M3 - Journal article

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AN - SCOPUS:85101016424

SN - 1944-8244

VL - 13

SP - 7812

EP - 7821

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 6

ER -

Rewritable High-Mobility Electrons in Oxide Heterostructure of Layered Perovskite/Perovskite

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