Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition

Jing Ning, Dong Wang, Yang Chai, Xin Feng, Meishan Mu, Lixin Guo, Jincheng Zhang, Yue Hao

Research output: Journal article publicationReview articleAcademic researchpeer-review

14 Citations (Scopus)


To date, chemical vapor deposition on transition metal catalysts is a potential way to achieve low cost, high quality and uniform wafer-scale graphene. However, the removal and transfer process of the annoying catalytic metals underneath can bring large amounts of uncertain factors causing the performance deterioration of graphene, such as the pollution of surface polymeric residues, unmentioned doping and structural damages. Thus, to develop a technique of directly fabricating graphene on dielectric substrates is quite meaningful. In this review, we will present specific methods of catalyst-or transfer-free techniques for graphene growth and discuss the diversity of growth mechanisms.
Original languageEnglish
Article number284001
Issue number28
Publication statusPublished - 23 Jun 2017


  • CVD
  • Directly fabricating
  • graphene
  • Wafer-scale

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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