Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

Meilin Tu, Haipeng Lu, Songwen Luo, Hao Peng, Shangdong Li, Yizhen Ke, Shuoguo Yuan, Wen Huang, Wenjing Jie, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)


Birnessite-related manganese dioxides (MnO2) have recently been studied owing to their diverse low-dimensional layered structures and potential applications in energy devices. The birnessite MnO2 possesses a layered structure with edge-shared MnO6 octahedra layer stacked with interlayer of cations. The unique layered structure may provide some distinct electrical properties for the 2D layered nanosheets. In this work, layered K-birnessite MnO2 samples are synthesized by a hydrothermal method. The resistive switching (RS) devices based on single K-birnessite MnO2 nanosheets are fabricated by transferring the nanosheets onto SiO2/Si substrates through a facile and feasible method of mechanical exfoliation. The device exhibits nonvolatile memory switching (MS) behaviors with high current ON/OFF ratio of âˆ2 × 105. And more importantly, reversible transformation between the nonvolatile MS and volatile threshold switching (TS) can be achieved in the single layered nanosheet through tuning the magnitude of compliance current (Icc). To be more specific, a relatively high Icc (1 mA) can trigger the nonvolatile MS behaviors, while a relatively low Icc (≤100 μA) can generate volatile TS characteristics. This work not only demonstrates the memristor based on single birnessite-related MnO2 nanosheet, but also offers an insight into understanding the complex resistive switching types and relevant physical mechanisms of the 2D layered oxide nanosheets.

Original languageEnglish
Pages (from-to)24133-24140
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number21
Publication statusPublished - 27 May 2020


  • 2D layered nanosheets
  • K-birnessite
  • memory switching
  • resistive switching
  • threshold switching

ASJC Scopus subject areas

  • Materials Science(all)

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