TY - JOUR
T1 - Reversible Semimetal–Semiconductor Transition of Unconventional-Phase WS2 Nanosheets
AU - Zhai, Wei
AU - Qi, Junlei
AU - Xu, Chao
AU - Chen, Bo
AU - Li, Zijian
AU - Wang, Yongji
AU - Zhai, Li
AU - Yao, Yao
AU - Li, Siyuan
AU - Zhang, Qinghua
AU - Ge, Yiyao
AU - Chi, Banlan
AU - Ren, Yi
AU - Huang, Zhiqi
AU - Lai, Zhuangchai
AU - Gu, Lin
AU - Zhu, Ye
AU - He, Qiyuan
AU - Zhang, Hua
N1 - Funding Information:
H.Z. thanks the support from the Project 52131301 supported by NSFC, the Science Technology and Innovation Committee of Shenzhen Municipality (grant no. JCYJ20200109143412311 and grant no. SGDX2020110309300301, “Preparation of single atoms on transition-metal chalcogenides for electrolytic hydrogen evolution”, CityU), ITC, via the Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), the Research Grants Council of Hong Kong (AoE/P-701/20, GRF Project no. 11315722), the Start-Up Grant (Project no. 9380100) and the grants (Project nos. 9680314, 9678272, 7020013, 7020054, and 1886921) from the City University of Hong Kong. Q.H. acknowledges the funding support from the Research Grants Council of Hong Kong (Early Career Scheme Project no. 21302821 and GRF Project no. 11314322), the Start-Up Grant (Project no. 9610482), and the grants (7005468 and 9229079) from the City University of Hong Kong. Y.Z. Thanks for the funding support from the Research Grants Council of Hong Kong (GRF no. 15308323) and the Hong Kong Polytechnic University (no. ZVRP). The authors also thank Professor J. S. Zhang (Tsinghua University) for discussing how to design a passivation layer to suppress the noise current.
Publisher Copyright:
© 2023 American Chemical Society
PY - 2023/6/21
Y1 - 2023/6/21
N2 - Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.
AB - Phase transition with band gap modulation of materials has gained intensive research attention due to its various applications, including memories, neuromorphic computing, and transistors. As a powerful strategy to tune the crystal phase of transition-metal dichalcogenides (TMDs), the phase transition of TMDs provides opportunities to prepare new phases of TMDs for exploring their phase-dependent property, function, and application. However, the previously reported phase transition of TMDs is mainly irreversible. Here, we report a reversible phase transition in the semimetallic 1T′-WS2 driven by proton intercalation and deintercalation, resulting in a newly discovered semiconducting WS2 with a novel unconventional phase, denoted as the 1T′d phase. Impressively, an on/off ratio of >106 has been achieved during the phase transition of WS2 from the semimetallic 1T′ phase to the semiconducting 1T′d phase. Our work not only provides a unique insight into the phase transition of TMDs via proton intercalation but also opens up possibilities to tune their physicochemical properties for various applications.
UR - http://www.scopus.com/inward/record.url?scp=85163841466&partnerID=8YFLogxK
U2 - 10.1021/jacs.3c03776
DO - 10.1021/jacs.3c03776
M3 - Journal article
SN - 0002-7863
VL - 145
SP - 13444
EP - 13451
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 24
ER -