Retention characteristics of SrBi2Ta2O9thin films prepared by metalorganic decomposition

Z. G. Zhang, Y. N. Wang, J. S. Zhu, Feng Yan, X. M. Lu, H. M. Shen, J. S. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

28 Citations (Scopus)

Abstract

Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that the polarization decay increases with increasing the write/read voltage within the first second. This could be attributed to the depolarization fields, which increases with increasing the retained polarization. However, we found that the polarization loss is insignificant with different write/read voltages over a range of 1-30000 S. Furthermore, experiment indicates that there is weak pinning of domain walls existing in SBT, which plays an important role for SBT thin film over a range of 1-30000 S with a low write/read voltage.
Original languageEnglish
Pages (from-to)3674-3676
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number25
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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