Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai; Yi Wu; Kuniharu Takei; Hong Yu Chen; Shimeng Yu; Philip Ching Ho Chan; Ali Javey; H. S.Philip Wong

doi:10.1109/IEDM.2010.5703328

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip Ching Ho Chan, Ali Javey, H. S.Philip Wong

The Hong Kong Polytechnic University

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

12 Citations (Scopus)

Abstract

We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs	https://doi.org/10.1109/IEDM.2010.5703328
Publication status	Published - 1 Dec 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703328

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title = "Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory",

abstract = "We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.",

author = "Yang Chai and Yi Wu and Kuniharu Takei and Chen, {Hong Yu} and Shimeng Yu and Chan, {Philip Ching Ho} and Ali Javey and Wong, {H. S.Philip}",

year = "2010",

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day = "1",

doi = "10.1109/IEDM.2010.5703328",

language = "English",

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Chai, Y, Wu, Y, Takei, K, Chen, HY, Yu, S, Chan, PCH, Javey, A & Wong, HSP 2010, Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703328, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703328

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AU - Chai, Yang

AU - Wu, Yi

AU - Takei, Kuniharu

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Chan, Philip Ching Ho

AU - Javey, Ali

AU - Wong, H. S.Philip

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

AB - We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.

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U2 - 10.1109/IEDM.2010.5703328

DO - 10.1109/IEDM.2010.5703328

M3 - Conference article published in proceeding or book

SN - 9781424474196

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

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