Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip Ching Ho Chan, Ali Javey, H. S.Philip Wong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

12 Citations (Scopus)


We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.
Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Publication statusPublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010


Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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