We demonstrate the nonvolatile resistive switching of an amorphous carbon (a-C) layer with carbon nanotube (CNT) electrodes for ultra-dense memory. The use of CNT as electrode leads to the ultimately scaled cross-point area (∼1 nm2), and the use of a-C results in an all-carbon memory. Carbon-based complementary resistive switching (CRS) is shown for the first time, enabling cross-point memory without cell selection devices.
|Conference||2010 IEEE International Electron Devices Meeting, IEDM 2010|
|City||San Francisco, CA|
|Period||6/12/10 → 8/12/10|
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry