Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Zhi Luo, Hon Kit Lau, Paddy Kwok Leung Chan, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3(PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.
Original languageEnglish
Article number6851336
JournalIEEE Transactions on Magnetics
Issue number7
Publication statusPublished - 1 Jul 2014


  • Nonvolatile memories
  • Pr Ca MnO (PCMO) 0.7 0.3 3
  • resistive switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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