Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Zhi Luo; Hon Kit Lau; Paddy Kwok Leung Chan; Chi Wah Leung

doi:10.1109/TMAG.2013.2297408

Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Zhi Luo, Hon Kit Lau, Paddy Kwok Leung Chan, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3(PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.

Original language	English
Article number	6851336
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2013.2297408
Publication status	Published - 1 Jul 2014

Keywords

Nonvolatile memories
Pr Ca MnO (PCMO) 0.7 0.3 3
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/TMAG.2013.2297408

Cite this

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title = "Resistive Switching in Perovskite-Oxide Capacitor-Type Devices",

abstract = "Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3(PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.",

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AU - Lau, Hon Kit

AU - Chan, Paddy Kwok Leung

AU - Leung, Chi Wah

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3(PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.

AB - Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3(PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes suggested that the forming process changed the interface between the oxides and Ti electrodes, with the active region for resistive switching located at the Ti electrode/PCMO interface region. Such results show the possibility of high-density and nonvolatile memory applications based on the resistive switching effect.

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KW - resistive switching

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Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Abstract

Keywords

ASJC Scopus subject areas

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