Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Yi Wu; Yang Chai; Hong Yu Chen; Shimeng Yu; H. S Philip Wong

Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Yi Wu, Yang Chai, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

22 Citations (Scopus)

Abstract

We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.

Original language	English
Title of host publication	2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages	26-27
Number of pages	2
Publication status	Published - 16 Sept 2011
Externally published	Yes
Event	2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan Duration: 14 Jun 2011 → 16 Jun 2011

Conference

Conference	2011 Symposium on VLSI Technology, VLSIT 2011
Country/Territory	Japan
City	Kyoto
Period	14/06/11 → 16/06/11

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@inproceedings{5f33a61266f14b98b97e3e020fe30d46,

title = "Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application",

abstract = "We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.",

author = "Yi Wu and Yang Chai and Chen, \{Hong Yu\} and Shimeng Yu and Wong, \{H. S Philip\}",

year = "2011",

month = sep,

day = "16",

language = "English",

isbn = "9784863481640",

pages = "26--27",

booktitle = "2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers",

note = "2011 Symposium on VLSI Technology, VLSIT 2011 ; Conference date: 14-06-2011 Through 16-06-2011",

}

Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application. / Wu, Yi; Chai, Yang; Chen, Hong Yu et al.
2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers. 2011. p. 26-27 5984616.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

AU - Wu, Yi

AU - Chai, Yang

AU - Chen, Hong Yu

AU - Yu, Shimeng

AU - Wong, H. S Philip

PY - 2011/9/16

Y1 - 2011/9/16

N2 - We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.

AB - We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.

UR - https://www.scopus.com/pages/publications/80052657811

M3 - Conference article published in proceeding or book

SN - 9784863481640

SP - 26

EP - 27

BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers

T2 - 2011 Symposium on VLSI Technology, VLSIT 2011

Y2 - 14 June 2011 through 16 June 2011

ER -

Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Abstract

Conference

ASJC Scopus subject areas

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