Abstract
We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.
Original language | English |
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Title of host publication | 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers |
Pages | 26-27 |
Number of pages | 2 |
Publication status | Published - 16 Sept 2011 |
Externally published | Yes |
Event | 2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan Duration: 14 Jun 2011 → 16 Jun 2011 |
Conference
Conference | 2011 Symposium on VLSI Technology, VLSIT 2011 |
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Country/Territory | Japan |
City | Kyoto |
Period | 14/06/11 → 16/06/11 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering