Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Yi Wu, Yang Chai, Hong Yu Chen, Shimeng Yu, H. S Philip Wong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

14 Citations (Scopus)

Abstract

We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 104 cycles with less than 5μA programming current. Extreme scaling of the device down to 6nmx6nm is realized by the CNT/AlOx/CNT cross-point structure and 104 switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.
Original languageEnglish
Title of host publication2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
Pages26-27
Number of pages2
Publication statusPublished - 16 Sep 2011
Externally publishedYes
Event2011 Symposium on VLSI Technology, VLSIT 2011 - Kyoto, Japan
Duration: 14 Jun 201116 Jun 2011

Conference

Conference2011 Symposium on VLSI Technology, VLSIT 2011
CountryJapan
CityKyoto
Period14/06/1116/06/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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