Resistance switching properties of epitaxial Pr 0.7Ca 0.3MnO 3 thin films with different electrodes

H. K. Lau, Chi Wah Leung, Y. K. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


Resistance switching effect caused by external electric field was investigated in Pr 0.7Ca 0.3MnO 3 (PCMO) thin films grown on (001)-oriented LaAlO 3, by using different metallic (Al, Pt, Au, Ti) electrodes. When Al was used as one or both of the electrodes, PCMO thin films exhibited resistance changes upon reversing voltage polarities. Nonlinear, hysteretic current-voltage loops were observed. Our measurements showed that the total resistance of the samples were dominated by interfacial resistance. Such kind of device structure can find applications in non-volatile memory devices. KGaA, Weinheim.
Original languageEnglish
Pages (from-to)2182-2186
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number9
Publication statusPublished - 1 Sep 2009

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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