Abstract
A resist hardening process using fluorocarbon plasma for optical mix-and-match lithography and electron-beam lithography was reported. The optical resist under low power fluorocarbon plasma was exposed using resist hardening process. It was found that optical resist profile did not change during the entire process. The matching of optical resist and e-beam was found to be excellent.
Original language | English |
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Pages (from-to) | 743-748 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 May 2001 |
Externally published | Yes |
Event | 13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering