Abstract
A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.
Original language | English |
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Article number | 6819403 |
Pages (from-to) | 1368-1371 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 26 |
Issue number | 13 |
DOIs | |
Publication status | Published - 1 Jul 2014 |
Keywords
- Efficiency droop
- Electron blocking layer
- Light emitting diodes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering