Reduced droop effect in nitride light emitting diodes with taper-shaped electron blocking layer

Chao Liu; Zhiwei Ren; Xin Chen; Bijun Zhao; Xingfu Wang; Shuti Li

doi:10.1109/LPT.2014.2325598

Reduced droop effect in nitride light emitting diodes with taper-shaped electron blocking layer

Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Shuti Li

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.

Original language	English
Article number	6819403
Pages (from-to)	1368-1371
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	13
DOIs	https://doi.org/10.1109/LPT.2014.2325598
Publication status	Published - 1 Jul 2014
Externally published	Yes

Keywords

Efficiency droop
Electron blocking layer
Light emitting diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

More information

10.1109/LPT.2014.2325598

Cite this

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abstract = "A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.",

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AU - Liu, Chao

AU - Ren, Zhiwei

AU - Chen, Xin

AU - Zhao, Bijun

AU - Wang, Xingfu

AU - Li, Shuti

PY - 2014/7/1

Y1 - 2014/7/1

N2 - A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.

AB - A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.

KW - Efficiency droop

KW - Electron blocking layer

KW - Light emitting diodes

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JF - IEEE Photonics Technology Letters

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M1 - 6819403

ER -

Reduced droop effect in nitride light emitting diodes with taper-shaped electron blocking layer

Abstract

Keywords

ASJC Scopus subject areas

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