Reduced droop effect in nitride light emitting diodes with taper-shaped electron blocking layer

Chao Liu, Zhiwei Ren, Xin Chen, Bijun Zhao, Xingfu Wang, Shuti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

13 Citations (Scopus)

Abstract

A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The improvement is due to improved electron confinement and hole transportation as well as decreased electrostatic fields in the active region.

Original languageEnglish
Article number6819403
Pages (from-to)1368-1371
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number13
DOIs
Publication statusPublished - 1 Jul 2014

Keywords

  • Efficiency droop
  • Electron blocking layer
  • Light emitting diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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