Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

Baojie Yang; Yongjing Deng; Peng Tao; Menglong Zhao; Weiwei Zhao; Runze Tang; Chenxi Ma; Qi Tan; Shujuan Liu; Qiang Zhao

doi:10.1016/j.orgel.2020.105815

Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

Baojie Yang
, Yongjing Deng
, Peng Tao
, Menglong Zhao
, Weiwei Zhao
, Runze Tang
, Chenxi Ma
, Qi Tan
, Shujuan Liu
, Qiang Zhao

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 10³, long retention time of 10³ s, and low threshold voltage of −0.55 V. After 10⁵ read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬

Original language	English
Article number	105815
Journal	Organic Electronics
Volume	85
DOIs	https://doi.org/10.1016/j.orgel.2020.105815
Publication status	Published - Oct 2020

Keywords

Ferrocene
Flash
Iridium(III) complexes
Memory devices
Redox

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

More information

10.1016/j.orgel.2020.105815

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@article{d4377cb6cfec47c78cc9b28eafd2e15e,

title = "Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory",

abstract = "A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I{\textendash}V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬",

keywords = "Ferrocene, Flash, Iridium(III) complexes, Memory devices, Redox",

author = "Baojie Yang and Yongjing Deng and Peng Tao and Menglong Zhao and Weiwei Zhao and Runze Tang and Chenxi Ma and Qi Tan and Shujuan Liu and Qiang Zhao",

note = "Funding Information: We acknowledge financial support from the National Funds for Distinguished Young Scientists ( 61825503 ), National Natural Science Foundation of China ( 51473078 , 21671108 and 61905120 ), Natural Science Foundation of Jiangsu Province of China ( BK20190740 ), Priority Academic Program Development of Jiangsu Higher Education Institutions ( YX03001 ), China Postdoctoral Science Foundation Funded Project ( 2018M640506 ), Jiangsu Planned Projects for Postdoctoral Research Funds ( 2018K003B ), the Scientific Foundation of Nanjing University of Posts and Telecommunications (NUPTSF) ( NY218123 ). Publisher Copyright: {\textcopyright} 2020 Elsevier B.V. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = oct,

doi = "10.1016/j.orgel.2020.105815",

language = "English",

volume = "85",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

AU - Yang, Baojie

AU - Deng, Yongjing

AU - Tao, Peng

AU - Zhao, Menglong

AU - Zhao, Weiwei

AU - Tang, Runze

AU - Ma, Chenxi

AU - Tan, Qi

AU - Liu, Shujuan

AU - Zhao, Qiang

N1 - Funding Information: We acknowledge financial support from the National Funds for Distinguished Young Scientists ( 61825503 ), National Natural Science Foundation of China ( 51473078 , 21671108 and 61905120 ), Natural Science Foundation of Jiangsu Province of China ( BK20190740 ), Priority Academic Program Development of Jiangsu Higher Education Institutions ( YX03001 ), China Postdoctoral Science Foundation Funded Project ( 2018M640506 ), Jiangsu Planned Projects for Postdoctoral Research Funds ( 2018K003B ), the Scientific Foundation of Nanjing University of Posts and Telecommunications (NUPTSF) ( NY218123 ). Publisher Copyright: © 2020 Elsevier B.V. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/10

Y1 - 2020/10

N2 - A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬

AB - A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬

KW - Ferrocene

KW - Flash

KW - Iridium(III) complexes

KW - Memory devices

KW - Redox

UR - https://www.scopus.com/pages/publications/85086589442

U2 - 10.1016/j.orgel.2020.105815

DO - 10.1016/j.orgel.2020.105815

M3 - Journal article

AN - SCOPUS:85086589442

SN - 1566-1199

VL - 85

JO - Organic Electronics

JF - Organic Electronics

M1 - 105815

ER -

Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

Abstract

Keywords

ASJC Scopus subject areas

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