Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

Baojie Yang, Yongjing Deng, Peng Tao, Menglong Zhao, Weiwei Zhao, Runze Tang, Chenxi Ma, Qi Tan, Shujuan Liu, Qiang Zhao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.‬

Original languageEnglish
Article number105815
JournalOrganic Electronics
Volume85
DOIs
Publication statusPublished - Oct 2020
Externally publishedYes

Keywords

  • Ferrocene
  • Flash
  • Iridium(III) complexes
  • Memory devices
  • Redox

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this