A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.
- Iridium(III) complexes
- Memory devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering