Abstract
Introducing oxygen vacancy causes the dielectric insulator SrTi O3 to evolve to a n -type semiconductor. The authors have fabricated n-SrTi O3-δ (110) p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V=±2 V for the p-n junction operated at T=292 K. The current-voltage characteristic follows Iexp (eVkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼ V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.
Original language | English |
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Article number | 062105 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 6 |
DOIs | |
Publication status | Published - 17 Aug 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)