Rectifying characteristics and transport behavior of SrTi O3-δ (110) p-Si (100) heterojunctions

Z. Luo, Jianhua Hao, J. Gao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)

Abstract

Introducing oxygen vacancy causes the dielectric insulator SrTi O3 to evolve to a n -type semiconductor. The authors have fabricated n-SrTi O3-δ (110) p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V=±2 V for the p-n junction operated at T=292 K. The current-voltage characteristic follows Iexp (eVkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼ V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model.
Original languageEnglish
Article number062105
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 17 Aug 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this