TY - GEN
T1 - Reconfigurable Sb2Se3-Silicon Waveguide Based Mode-Order Converter for On-Chip Multimode Silicon Photonics
AU - Fei, Yedeng
AU - Xu, Yin
AU - Huang, Dongmei
AU - Dong, Yue
AU - Zhang, Bo
AU - Ni, Yi
N1 - Funding Information:
ACKNOWLEDGEMENT This work was supported by the National Key R&D Program of China under Grant 2019YFB1803904, National Science Foundation of China under Grant 62205129, Natural Science Foundation of Jiangsu Province under Grant BK20200592, and Fundamental Research Funds for the Central Universities under Grant JUSRP12024.
Publisher Copyright:
© 2022 IEEE.
PY - 2022/11
Y1 - 2022/11
N2 - Reconfigurable mode converters can offer efficient higher-order mode sources for the on-chip multimode silicon photonics. In this work, we develop a reconfigurable Sb2Se3-silicon waveguide-based mode-order converter. The mode conversion region consists of a tapered Sb2Se3 embedded in the silicon waveguide and a coated graphene layer as the phase change heater, which can achieve the reconfigurable mode conversion function between TE0-TE1 and TE0-TE0. The total device length is only 2.3 μm with conversion efficiency 97.5%, insertion loss 0.2 dB, and mode crosstalk <-20.5 dB at λ=1.55 μm for the TE0-TE1 mode conversion. Such mode conversion function can also disappear if the phase state of Sb2Se3 is changing from crystalline to amorphous state. Moreover, the present device has functional scalability, which could support other higher-order mode conversions.
AB - Reconfigurable mode converters can offer efficient higher-order mode sources for the on-chip multimode silicon photonics. In this work, we develop a reconfigurable Sb2Se3-silicon waveguide-based mode-order converter. The mode conversion region consists of a tapered Sb2Se3 embedded in the silicon waveguide and a coated graphene layer as the phase change heater, which can achieve the reconfigurable mode conversion function between TE0-TE1 and TE0-TE0. The total device length is only 2.3 μm with conversion efficiency 97.5%, insertion loss 0.2 dB, and mode crosstalk <-20.5 dB at λ=1.55 μm for the TE0-TE1 mode conversion. Such mode conversion function can also disappear if the phase state of Sb2Se3 is changing from crystalline to amorphous state. Moreover, the present device has functional scalability, which could support other higher-order mode conversions.
KW - mode converter
KW - optical phase change material
KW - photonic integrated component
KW - silicon photonics
UR - http://www.scopus.com/inward/record.url?scp=85153865479&partnerID=8YFLogxK
U2 - 10.1109/ACP55869.2022.10088771
DO - 10.1109/ACP55869.2022.10088771
M3 - Conference article published in proceeding or book
AN - SCOPUS:85153865479
T3 - Asia Communications and Photonics Conference, ACP
SP - 1406
EP - 1409
BT - 2022 Asia Communications and Photonics Conference, ACP 2022 and International Conference on Information Photonics and Optical Communications, IPOC 2022
PB - Optica Publishing Group (formerly OSA)
T2 - 2022 Asia Communications and Photonics Conference, ACP 2022 and International Conference on Information Photonics and Optical Communications, IPOC 2022
Y2 - 5 November 2022 through 8 November 2022
ER -