Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access

In this data explosion era, ensuring the secure storage, access, and transmission of information is imperative, encompassing all aspects ranging from safeguarding personal devices to formulating national information security strategies. Leveraging the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after reading, thereby guaranteeing data security. In this study, a reconfigurable ambipolar optoelectronic synaptic transistor based on poly (3-hexylthiophene) (P3HT) and poly [[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)] (N2200) blend film was fabricated through solution-processed method. The resulting transistor exhibited a relatively large ON/OFF ratio of 10³ in both n- and p-type regions, and tunable photoconductivity after light illumination, particularly with green light. The photo-generated carriers could be effectively trapped under the gate bias, indicating its potential application in mimicking synaptic behaviors. Furthermore, the synaptic plasticity, including volatile/non−volatile and excitatory/inhibitory characteristics, could be finely modulated by electrical and optical stimuli. These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading. This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems.