Rapid photoreflectance spectroscopy for strained silicon metrology

H. Chouaib; M. E. Murtagh; V. Gùnebaut; S. Ward; P. V. Kelly; M. Kennard; Y. M. Le Vaillant; Michael Geoffrey Somekh; M. C. Pitter; S. D. Sharples

doi:10.1063/1.2999919

Rapid photoreflectance spectroscopy for strained silicon metrology

H. Chouaib, M. E. Murtagh, V. Gùnebaut, S. Ward, P. V. Kelly, M. Kennard, Y. M. Le Vaillant, Michael Geoffrey Somekh, M. C. Pitter, S. D. Sharples

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.

Original language	English
Article number	103106
Journal	Review of Scientific Instruments
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.2999919
Publication status	Published - 10 Nov 2008
Externally published	Yes

ASJC Scopus subject areas

Instrumentation

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10.1063/1.2999919

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@article{c9014c3afbea44e59423274c400cad77,

title = "Rapid photoreflectance spectroscopy for strained silicon metrology",

abstract = "We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.",

author = "H. Chouaib and Murtagh, {M. E.} and V. G{\`u}nebaut and S. Ward and Kelly, {P. V.} and M. Kennard and {Le Vaillant}, {Y. M.} and Somekh, {Michael Geoffrey} and Pitter, {M. C.} and Sharples, {S. D.}",

year = "2008",

month = nov,

day = "10",

doi = "10.1063/1.2999919",

language = "English",

volume = "79",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Rapid photoreflectance spectroscopy for strained silicon metrology

AU - Chouaib, H.

AU - Murtagh, M. E.

AU - Gùnebaut, V.

AU - Ward, S.

AU - Kelly, P. V.

AU - Kennard, M.

AU - Le Vaillant, Y. M.

AU - Somekh, Michael Geoffrey

AU - Pitter, M. C.

AU - Sharples, S. D.

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.

AB - We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=55349108517&partnerID=8YFLogxK

U2 - 10.1063/1.2999919

DO - 10.1063/1.2999919

M3 - Journal article

SN - 0034-6748

VL - 79

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 10

M1 - 103106

ER -

Rapid photoreflectance spectroscopy for strained silicon metrology

Abstract

ASJC Scopus subject areas

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