Abstract
We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.
Original language | English |
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Article number | 103106 |
Journal | Review of Scientific Instruments |
Volume | 79 |
Issue number | 10 |
DOIs | |
Publication status | Published - 10 Nov 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- Instrumentation