Rapid photoreflectance spectroscopy for strained silicon metrology

H. Chouaib, M. E. Murtagh, V. Gùnebaut, S. Ward, P. V. Kelly, M. Kennard, Y. M. Le Vaillant, Michael Geoffrey Somekh, M. C. Pitter, S. D. Sharples

Research output: Journal article publicationJournal articleAcademic researchpeer-review

15 Citations (Scopus)

Abstract

We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strained silicon. Shrinkage in the silicon bandgap is measured and converted to strain, using theoretical models. Experimental RPR results are in good correlation with Raman spectroscopy.
Original languageEnglish
Article number103106
JournalReview of Scientific Instruments
Volume79
Issue number10
DOIs
Publication statusPublished - 10 Nov 2008
Externally publishedYes

ASJC Scopus subject areas

  • Instrumentation

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