Randomly packed n -SnO2nanorods/ p-SiC heterojunction light-emitting diodes

H. Y. Yang, Siu Fung Yu, C. W. Cheng, S. H. Tsang, H. K. Liang, H. J. Fan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

33 Citations (Scopus)


A layer of randomly packed n SnO2nanorods is grown by vapor transport method on the p-SiC (4H) substrate to realize heterojunction light-emitting diodes. Diodelike rectifying current-voltage characteristics, with a turn-on voltage of ∼4.5 V and reverse leakage current density of <0.25 A/ m2, are obtained at room temperature. Furthermore, electroluminescent spectra with emission peaks at around 395, 434, and 497 nm are observed from the heterojunction under forward bias. This is due to the relaxation of electrons in the conduction band of SnO2to the surface defect states and subsequent radiative recombination with holes injected from the p-SiC substrate.
Original languageEnglish
Article number201104
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 30 Nov 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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