Quantum dot-doped porous silicon metal semiconductor metal photodetector

Chia Man Chou, Hsing Tzu Cho, Vincent K S Hsiao, Ken Tye Yong, Wing Cheung Law

Research output: Journal article publicationJournal articleAcademic researchpeer-review

12 Citations (Scopus)


In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.
Original languageEnglish
JournalNanoscale Research Letters
Publication statusPublished - 24 Jul 2012
Externally publishedYes


  • Photodetector
  • Porous silicon
  • Quantum dots

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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