The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavity surface emitting semiconductor lasers is proposed and analysed theoretically. It is found that by introducing a step diffused quantum well structure inside the core region of a quantum-well active layer, the influence of self-focusing (due to carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized. Therefore, stable single-mode operation in vertical cavity surface emitting lasers can be maintained.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering