Abstract
The use of interdiffused quantum wells to enhance single transverse mode operation in vertical cavity surface emitting semiconductor lasers is proposed and analysed theoretically. It is found that by introducing a step diffused quantum well structure inside the core region of a quantum-well active layer, the influence of self-focusing (due to carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized. Therefore, stable single-mode operation in vertical cavity surface emitting lasers can be maintained.
| Original language | English |
|---|---|
| Pages (from-to) | 71-77 |
| Number of pages | 7 |
| Journal | Optical and Quantum Electronics |
| Volume | 30 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1998 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering