Properties of interfaces between SrTiO3thin films and electrodes

Anna M. Clark, Jianhua Hao, Weidong Si, X. X. Xi

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)


SrTiO3films with thickness ranging from 25nn to 2.5μm were grown on LaAlO3substrates with SrRuO3electrode layers. Measurements of the dielectric properties were performed over a range of temperatures The dielectric loss depends strongly on the thickness, but differently above and below T ∼ 80 K. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dommates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important. The contribution to the interfacial potential from Schottky barriers was investigated for different electrode materials. Preliminary results of this study suggest that the continued dielectric nonlinearity of the thin films at high temperatures (above T ∼ 80 K) complicates the analysis of the Schottky barrier height measurements. Published by license under the Gordon and Breach Science Publishers imprint.
Original languageEnglish
Pages (from-to)53-61
Number of pages9
JournalIntegrated Ferroelectrics
Issue number1-2
Publication statusPublished - 1 Jan 2000
Externally publishedYes


  • Schottky barriers
  • Strontium titanate: Dielectric loss

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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