Properties of furnace crystallized polysilicon films prepared by r.f. sputtering

Z. Sun, K. Y. Tong, Wing Bun Lee

Research output: Journal article publicationJournal articleAcademic researchpeer-review

11 Citations (Scopus)


We have investigated the materials and electrical properties of furnace crystallized polysilicon films prepared by r.f. magnetron sputtering under different deposition pressure and annealing temperatures, Rutherford backscattering spectroscopy, Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy were used to analyse the microstructure, and temperature dependence of the dark conductivity was used to characterize the trap state density in the grain boundaries. Our results show that the sputtering pressure is an important parameter affecting the argon and oxygen impurities in the film. The grain size decreases at higher sputtering pressure. There is an optimum pressure at which maximum Hall mobility and minimum trap state density are obtained. Above 1 100°C a recrystallization grain growth process occurs, resulting in larger grain size and a rapid increase in Hall mobility.
Original languageEnglish
Pages (from-to)224-228
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 15 Nov 1996


  • Silicon
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'Properties of furnace crystallized polysilicon films prepared by r.f. sputtering'. Together they form a unique fingerprint.

Cite this