Properties of crystallized Si1-xGexthin films deposited by sputtering

Emil V. Jelenkovic; K. Y. Tong; Z. Sun; Chee Leung Mak; W. Y. Cheung

doi:10.1116/1.580836

Properties of crystallized Si_1-xGe_xthin films deposited by sputtering

Emil V. Jelenkovic
, K. Y. Tong
, Z. Sun
, Chee Leung Mak
, W. Y. Cheung

Research output: Journal article publication › Journal article › Academic research › peer-review

49 Citations (Scopus)

Abstract

Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.

Original language	English
Pages (from-to)	2836-2841
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.580836
Publication status	Published - 1 Jan 1997

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.580836

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abstract = "Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19\% to 53\%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.",

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AU - Jelenkovic, Emil V.

AU - Tong, K. Y.

AU - Sun, Z.

AU - Mak, Chee Leung

AU - Cheung, W. Y.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.

AB - Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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ER -

Properties of crystallized Si_1-xGe_xthin films deposited by sputtering

Abstract

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