Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1 Jan 1997|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films