Properties of crystallized Si1-xGexthin films deposited by sputtering

Emil V. Jelenkovic, K. Y. Tong, Z. Sun, Chee Leung Mak, W. Y. Cheung

Research output: Journal article publicationJournal articleAcademic researchpeer-review

47 Citations (Scopus)


Si1-xGexwere deposited by a radio frequency magnetron sputtering system and were furnace crystallized at a temperature of 550°C. The crystallization process was characterized by x-ray diffraction (XRD), Raman spectra, electron spin resonance transmission electron microscopy. The effect of germanium content in the films was studied for samples with germanium from 19% to 53%. Doping of Si1-xGexfilms by phosphorous was investigated through measurement of sheet resistance and carrier mobility. It was found that sputtered Si1-xGexfilms can be useful for thin film transistors with low temperature budget. No significant clustering of pure Ge or Si in Si1-xGexfilms was deduced from the recorded XRD and Raman spectra.
Original languageEnglish
Pages (from-to)2836-2841
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number6
Publication statusPublished - 1 Jan 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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