Proper Hot Filament CVD Conditions for Fabrication of Ti-Boron Doped Diamond Electrodes

Xueming Chen, Guohua Chen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

18 Citations (Scopus)


Hot filament chemical vapor deposition (CVD) of boron-doped diamond films on Ti substrates was investigated under different conditions with CH4and H2as precursors. Accelerated life tests, and physiochemical as well as electrochemical characterization, were conducted to assess the qualities of the electrodes obtained. The proper conditions were found to be substrate temperature 850°C, filament temperature 2120-2150°C, CH4concentration 0,8%, filament-substrate distance 8 mm, deposition time 15 h, and pressure 30 mbar, under which the films with well-defined diamond features could be successfully deposited on Ti substrates, In addition, the thereby-prepared electrodes demonstrated the longest service life and good voltammetric behavior.
Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number4
Publication statusPublished - 7 May 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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