Programmable 3-dimensional memories based on current induced conductivity in hydrogenated amorphous silicon nitride

Keyphrases

• Three-dimensional (3D) 100%
• Induced Current 100%
• Current Stressing 100%
• Hydrogenated Amorphous Silicon Nitride 100%
• Memory-based 100%
• On-state Current 100%
• Multilayer Structure 50%
• Order of Magnitude 50%
• Silicon Alloys 50%
• Alloying Metals 50%
• Hydrogenated Amorphous Silicon 50%
• Metal-semiconductor-metal 50%
• Stress State 50%
• Silicon Nitride 50%
• Silicon Dangling Bond 50%
• Low Field 50%
• Defect Band 50%
• SiNx 50%
• Three-dimensional Circuits 50%
• Silicon Nitride Layer 50%
• Low Activation Energy 50%
• MSM Device 50%
• Memory Application 50%
• Current Transport 50%
• Unstressed State 50%
• Binary Information 50%

Material Science

• Silicon Nitride 100%
• Amorphous Silicon 100%
• Silicon 66%
• Electronic Circuit 33%
• Silicon Alloys 33%
• Activation Energy 33%
• Laminate 33%