Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, Xiaoming Tao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

23 Citations (Scopus)

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Material Science

Chemistry