Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts

R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, Xiaoming Tao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

22 Citations (Scopus)


Under identical preparation conditions, AuGaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers.
Original languageEnglish
Article number143505
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 12 Oct 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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