Pressure dependence of the fano asymmetry of optical phonons in Zn1 - xCoxSe and Zn1 - xFexSe

J. Bak; U. Venkateswaran; Chee Leung Mak; R. Sooryakumar; B. T. Jonker

doi:10.1016/0022-3697(94)00241-X

Pressure dependence of the fano asymmetry of optical phonons in Zn_{1 - x}Co_xSe and Zn_{1 - x}Fe_xSe

J. Bak, U. Venkateswaran, Chee Leung Mak, R. Sooryakumar, B. T. Jonker

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

Effects of hydrostatic pressure on the optical phonons in ZnSe doped with Co and Fe at 10 K and up to 5 GPa are presented. Raman spectra from Zn1 - xCoxSe (x = 1.6%) show the LO phonon developing an asymmetry with increasing pressure while the asymmetry already present at 1 bar in the x = 7.4% sample increases slightly with pressure. The optical phonon in Zn1 - xFexSe (x = 8.8%) shows no modifications to its line profile for all pressures. These results are discussed in terms of a coupling between the phonons and a Raman continuum that is thought to arise through a pressure tunable p-d hybridization of the low lying crystal field levels and the valence band.

Original language	English
Pages (from-to)	563-566
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	56
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-3697(94)00241-X
Publication status	Published - 1 Jan 1995
Externally published	Yes

Keywords

A. semiconductors
C. high pressure
C. Raman spectroscopy
D. phonons

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

More information

10.1016/0022-3697(94)00241-X

Cite this

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title = "Pressure dependence of the fano asymmetry of optical phonons in Zn1 - xCoxSe and Zn1 - xFexSe",

abstract = "Effects of hydrostatic pressure on the optical phonons in ZnSe doped with Co and Fe at 10 K and up to 5 GPa are presented. Raman spectra from Zn1 - xCoxSe (x = 1.6%) show the LO phonon developing an asymmetry with increasing pressure while the asymmetry already present at 1 bar in the x = 7.4% sample increases slightly with pressure. The optical phonon in Zn1 - xFexSe (x = 8.8%) shows no modifications to its line profile for all pressures. These results are discussed in terms of a coupling between the phonons and a Raman continuum that is thought to arise through a pressure tunable p-d hybridization of the low lying crystal field levels and the valence band.",

keywords = "A. semiconductors, C. high pressure, C. Raman spectroscopy, D. phonons",

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T1 - Pressure dependence of the fano asymmetry of optical phonons in Zn1 - xCoxSe and Zn1 - xFexSe

AU - Bak, J.

AU - Venkateswaran, U.

AU - Mak, Chee Leung

AU - Sooryakumar, R.

AU - Jonker, B. T.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Effects of hydrostatic pressure on the optical phonons in ZnSe doped with Co and Fe at 10 K and up to 5 GPa are presented. Raman spectra from Zn1 - xCoxSe (x = 1.6%) show the LO phonon developing an asymmetry with increasing pressure while the asymmetry already present at 1 bar in the x = 7.4% sample increases slightly with pressure. The optical phonon in Zn1 - xFexSe (x = 8.8%) shows no modifications to its line profile for all pressures. These results are discussed in terms of a coupling between the phonons and a Raman continuum that is thought to arise through a pressure tunable p-d hybridization of the low lying crystal field levels and the valence band.

AB - Effects of hydrostatic pressure on the optical phonons in ZnSe doped with Co and Fe at 10 K and up to 5 GPa are presented. Raman spectra from Zn1 - xCoxSe (x = 1.6%) show the LO phonon developing an asymmetry with increasing pressure while the asymmetry already present at 1 bar in the x = 7.4% sample increases slightly with pressure. The optical phonon in Zn1 - xFexSe (x = 8.8%) shows no modifications to its line profile for all pressures. These results are discussed in terms of a coupling between the phonons and a Raman continuum that is thought to arise through a pressure tunable p-d hybridization of the low lying crystal field levels and the valence band.

KW - A. semiconductors

KW - C. high pressure

KW - C. Raman spectroscopy

KW - D. phonons

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