Preparation of highly c-axis oriented Sr0.6Ba0.4Nb2O6thin films grown on Silicon substrate by the sol-gel process

Zhiru Shen, Hui Ye, Chee Leung Mak, K. H. Wong, T. Y. Yum, Wenchao Liu, Tong Zou

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)

Abstract

Ferroelectric strontium barium niobate (Sr0.6Ba0.4Nb2O6) thin films have been prepared on p-type Si (1 0 0) substrates using sol-gel process. The micro-structure and crystalline phase were studied by X-ray diffractometry, transmission electron microscopy and Raman microprobe spectroscopy. It is found that the SBN films performed a highly c-axis preferred orientation perpendicular to the Si substrates. The preferred orientation is demonstrated to be closely related to the existence of the potassium ions which were not be filtered out completely during the preparation of the niobium alkoxide. High post-annealing temperature results in inter-diffusion of the potassium ions, strontium ions, barium ions and silicon ions, which can create an amorphous layer between the SBN film and the Si substrate. However, the amorphous layer can adjust the large lattice mismatch between the film and substrate and serves as a buffer layer for the highly c-axis orientated SBN films.
Original languageEnglish
Pages (from-to)10-14
Number of pages5
JournalMaterials Chemistry and Physics
Volume99
Issue number1
DOIs
Publication statusPublished - 10 Sep 2006

Keywords

  • Amorphous
  • Buffer layer
  • Potassium ion
  • Preferred orientation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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