Preparation and properties of sol-gel-derived Bi0.5Na0.5TiO3lead-free ferroelectric thin film

T. Yu; Kin Wing Kwok; H. L.W. Chan

doi:10.1016/j.tsf.2006.10.136

Preparation and properties of sol-gel-derived Bi_0.5Na_0.5TiO₃lead-free ferroelectric thin film

T. Yu, Kin Wing Kwok, H. L.W. Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

110 Citations (Scopus)

Abstract

Polycrystalline ferroelectric lead-free Bi0.5Na0.5TiO3(BNT) thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by an improved sol-gel process using rapid thermal annealing. Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the film at a relatively low temperature of 650 °C. The resulting film is dense and well crystallized in the rhombohedral perovskite phase, and has good electrical and ferroelectric properties. The observed dielectric constant and loss at 100 kHz are 277 and 0.02, respectively, while the observed remanent polarization and coercive field under an alternating current electric field of 1100 kV/cm are 8.3 μC/cm2and 200 kV/cm, respectively. The BNT based film is expected to be a promising candidate for lead-free piezoelectric applications.

Original language	English
Pages (from-to)	3563-3566
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	7-8
DOIs	https://doi.org/10.1016/j.tsf.2006.10.136
Publication status	Published - 26 Feb 2007

Keywords

Ferroelectric
Lead-free
Sol-gel process

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

More information

10.1016/j.tsf.2006.10.136

Cite this

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title = "Preparation and properties of sol-gel-derived Bi0.5Na0.5TiO3lead-free ferroelectric thin film",

abstract = "Polycrystalline ferroelectric lead-free Bi0.5Na0.5TiO3(BNT) thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by an improved sol-gel process using rapid thermal annealing. Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the film at a relatively low temperature of 650 °C. The resulting film is dense and well crystallized in the rhombohedral perovskite phase, and has good electrical and ferroelectric properties. The observed dielectric constant and loss at 100 kHz are 277 and 0.02, respectively, while the observed remanent polarization and coercive field under an alternating current electric field of 1100 kV/cm are 8.3 μC/cm2and 200 kV/cm, respectively. The BNT based film is expected to be a promising candidate for lead-free piezoelectric applications.",

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AU - Yu, T.

AU - Kwok, Kin Wing

AU - Chan, H. L.W.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - Polycrystalline ferroelectric lead-free Bi0.5Na0.5TiO3(BNT) thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by an improved sol-gel process using rapid thermal annealing. Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the film at a relatively low temperature of 650 °C. The resulting film is dense and well crystallized in the rhombohedral perovskite phase, and has good electrical and ferroelectric properties. The observed dielectric constant and loss at 100 kHz are 277 and 0.02, respectively, while the observed remanent polarization and coercive field under an alternating current electric field of 1100 kV/cm are 8.3 μC/cm2and 200 kV/cm, respectively. The BNT based film is expected to be a promising candidate for lead-free piezoelectric applications.

AB - Polycrystalline ferroelectric lead-free Bi0.5Na0.5TiO3(BNT) thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by an improved sol-gel process using rapid thermal annealing. Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the film at a relatively low temperature of 650 °C. The resulting film is dense and well crystallized in the rhombohedral perovskite phase, and has good electrical and ferroelectric properties. The observed dielectric constant and loss at 100 kHz are 277 and 0.02, respectively, while the observed remanent polarization and coercive field under an alternating current electric field of 1100 kV/cm are 8.3 μC/cm2and 200 kV/cm, respectively. The BNT based film is expected to be a promising candidate for lead-free piezoelectric applications.

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KW - Sol-gel process

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