Abstract
Sol-gel-derived niobium (Nb)-doped lead zirconate titanate (PZT) films have been deposited on silicon substrates with a lead titanate seeding layer by the multiple-spin-coating technique. The doping level of Nb ranges from 0 to 2 mol%. With the seeding layer, the PZT films can crystallize well into the perovskite phase at a low temperature of 550°C for 2 h. The films are dense and have good dielectric and piezoelectric properties. Effective longitudinal and transverse piezoelectric coefficients (d 33,c and e 31,c ) of the films have been measured. Our results reveal that the Nb dopant effects on the PZT films are very similar to the experimentally-known effects on the corresponding bulk ceramics, i.e. enhancing both the longitudinal and transverse piezoelectric properties. For the PZT film doped with 1 mol% Nb, the observed values of d 33,c and e 31,c are 74 pm/V and 12.8 C/m 2 , respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 155-162 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 80 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Nov 2006 |
Keywords
- Nb dopant
- Piezoelectric properties
- PZT thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry