Preparation and piezoelectric properties of sol-gel-derived Nb-doped PZT films for MEMS applications

Kin Wing Kwok, K. P. Kwok, R. C.W. Tsang, H. L.W. Chan, C. L. Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)

Abstract

Sol-gel-derived niobium (Nb)-doped lead zirconate titanate (PZT) films have been deposited on silicon substrates with a lead titanate seeding layer by the multiple-spin-coating technique. The doping level of Nb ranges from 0 to 2 mol%. With the seeding layer, the PZT films can crystallize well into the perovskite phase at a low temperature of 550°C for 2 h. The films are dense and have good dielectric and piezoelectric properties. Effective longitudinal and transverse piezoelectric coefficients (d 33,c and e 31,c ) of the films have been measured. Our results reveal that the Nb dopant effects on the PZT films are very similar to the experimentally-known effects on the corresponding bulk ceramics, i.e. enhancing both the longitudinal and transverse piezoelectric properties. For the PZT film doped with 1 mol% Nb, the observed values of d 33,c and e 31,c are 74 pm/V and 12.8 C/m 2 , respectively.
Original languageEnglish
Pages (from-to)155-162
Number of pages8
JournalIntegrated Ferroelectrics
Volume80
Issue number1
DOIs
Publication statusPublished - 1 Nov 2006

Keywords

  • Nb dopant
  • Piezoelectric properties
  • PZT thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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