Preparation and electrical properties of (100) preferred (Ba,Sr)TiO3 bilayer thin films derived from pulse laser deposition method

S.G. Lu; P.A. Friddle; Z.K. Xu; G.G. Siu; H. Chen; K.H. Wong; Chee Leung Mak

Preparation and electrical properties of (100) preferred (Ba,Sr)TiO3 bilayer thin films derived from pulse laser deposition method

S.G. Lu, P.A. Friddle, Z.K. Xu, G.G. Siu, H. Chen, K.H. Wong, Chee Leung Mak

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Sisubstrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

Original language	English
Pages (from-to)	849-852
Number of pages	4
Journal	High-Performance Ceramics Iii, Pts 1 and 2
Volume	280-283
Publication status	Published - 2005

Keywords

Barium strontium titanate
Preferred orientation
Thin film
Pulse laser deposition

ASJC Scopus subject areas

Mechanical Engineering
Mechanics of Materials
General Materials Science

Cite this

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title = "Preparation and electrical properties of (100) preferred (Ba,Sr)TiO3 bilayer thin films derived from pulse laser deposition method",

abstract = "Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Sisubstrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.",

keywords = "Barium strontium titanate, Preferred orientation, Thin film, Pulse laser deposition",

author = "S.G. Lu and P.A. Friddle and Z.K. Xu and G.G. Siu and H. Chen and K.H. Wong and Mak, {Chee Leung}",

year = "2005",

language = "English",

volume = "280-283",

pages = "849--852",

journal = "High-Performance Ceramics Iii, Pts 1 and 2",

issn = "1013-9826",

publisher = "Trans Tech Publications Ltd",

}

TY - JOUR

T1 - Preparation and electrical properties of (100) preferred (Ba,Sr)TiO3 bilayer thin films derived from pulse laser deposition method

AU - Lu, S.G.

AU - Friddle, P.A.

AU - Xu, Z.K.

AU - Siu, G.G.

AU - Chen, H.

AU - Wong, K.H.

AU - Mak, Chee Leung

PY - 2005

Y1 - 2005

N2 - Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Sisubstrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

AB - Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Sisubstrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

KW - Barium strontium titanate

KW - Preferred orientation

KW - Thin film

KW - Pulse laser deposition

M3 - Journal article

SN - 1013-9826

VL - 280-283

SP - 849

EP - 852

JO - High-Performance Ceramics Iii, Pts 1 and 2

JF - High-Performance Ceramics Iii, Pts 1 and 2

ER -

Preparation and electrical properties of (100) preferred (Ba,Sr)TiO3 bilayer thin films derived from pulse laser deposition method

Abstract

Keywords

ASJC Scopus subject areas

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