Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO 3 bilayer thin films derived from pulse laser deposition method

S. G. Lu; Philip A. Friddle; Z. K. Xu; G. G. Siu; Haydn Chen; K. H. Wong; Chee Leung Mak

Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO ₃ bilayer thin films derived from pulse laser deposition method

S. G. Lu, Philip A. Friddle, Z. K. Xu, G. G. Siu, Haydn Chen, K. H. Wong, Chee Leung Mak

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Bilayer Ba0.6Sr0.4TiO3 - Ba 0.4Sr0.6TiO3 and Ba0.4Sr 0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO 2/Si substrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

Original language	English
Pages (from-to)	849-852
Number of pages	4
Journal	Key Engineering Materials
Volume	280-283
Issue number	I
Publication status	Published - 1 Dec 2005

Keywords

Barium strontium titanate
Preferred orientation
Pulse laser deposition
Thin film

ASJC Scopus subject areas

Ceramics and Composites
Chemical Engineering (miscellaneous)

Cite this

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title = "Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO 3 bilayer thin films derived from pulse laser deposition method",

abstract = "Bilayer Ba0.6Sr0.4TiO3 - Ba 0.4Sr0.6TiO3 and Ba0.4Sr 0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO 2/Si substrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.",

keywords = "Barium strontium titanate, Preferred orientation, Pulse laser deposition, Thin film",

author = "Lu, {S. G.} and Friddle, {Philip A.} and Xu, {Z. K.} and Siu, {G. G.} and Haydn Chen and Wong, {K. H.} and Mak, {Chee Leung}",

year = "2005",

month = dec,

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language = "English",

volume = "280-283",

pages = "849--852",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

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TY - JOUR

T1 - Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO 3 bilayer thin films derived from pulse laser deposition method

AU - Lu, S. G.

AU - Friddle, Philip A.

AU - Xu, Z. K.

AU - Siu, G. G.

AU - Chen, Haydn

AU - Wong, K. H.

AU - Mak, Chee Leung

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Bilayer Ba0.6Sr0.4TiO3 - Ba 0.4Sr0.6TiO3 and Ba0.4Sr 0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO 2/Si substrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

AB - Bilayer Ba0.6Sr0.4TiO3 - Ba 0.4Sr0.6TiO3 and Ba0.4Sr 0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO 2/Si substrates using pulse laser deposition method. A (100) preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

KW - Barium strontium titanate

KW - Preferred orientation

KW - Pulse laser deposition

KW - Thin film

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M3 - Journal article

SN - 1013-9826

VL - 280-283

SP - 849

EP - 852

JO - Key Engineering Materials

JF - Key Engineering Materials

IS - I

ER -

Preparation and electrical properties of (100) Preferred (Ba,Sr)TiO ₃ bilayer thin films derived from pulse laser deposition method

Abstract

Keywords

ASJC Scopus subject areas

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